Inkcazo
Umgangatho wokuvelisa i-GE kunye neteknoloji yokucubungula yaziswa kwaye yaqeshwa yi-RUNAU Electronics ukususela ngo-1980.Imeko epheleleyo yokuvelisa kunye novavanyo yayihambelana ngokupheleleyo nemfuno yentengiso yase-USA.Njengovulindlela wokuvelisa i-thyristor e-China, i-RUNAU Electronics yayibonelele ngobugcisa bezixhobo zombane zamandla karhulumente kwi-USA, amazwe aseYurophu kunye nabasebenzisi behlabathi.Ifaneleke kakhulu kwaye ihlolwe ngabathengi kwaye iphumelele enkulu kunye nexabiso lenzelwe amaqabane.
Intshayelelo:
1. Itshiphu
I-chip ye-thyristor eyenziwe yi-RUNAU Electronics i-sintered alloying iteknoloji esebenzayo.I-silicon kunye ne-molybdenum wafer yayifakwe kwi-alloying nge-aluminiyam ecocekileyo (99.999%) phantsi kwe-vacuum ephezulu kunye nokusingqongileyo okuphezulu.Ulawulo lweempawu ze-sintering yinto ephambili yokuchaphazela umgangatho we-thyristor.Ulwazi lwe-RUNAU Electronics ngaphezu kokulawula ubunzulu be-alloy junction, flatness surface, i-alloy cavity kunye nobuchule obugcweleyo bokusabalalisa, ipateni yesangqa sesangqa, isakhiwo sesango elikhethekileyo.Kwakhona ukucutshungulwa okukhethekileyo kwaqeshwa ukunciphisa ubomi bomthwali wesixhobo, ukwenzela ukuba isantya sokudibanisa umthuthi wangaphakathi sikhawuleze kakhulu, intlawulo yokubuyisela umva yesixhobo iyancitshiswa, kwaye isantya sokutshintsha siphuculwe ngenxa yoko.Imilinganiselo enjalo isetyenziselwe ukwandisa iimpawu zokutshintsha ngokukhawuleza, iimpawu ze-state-state, kunye nepropati yangoku.Ukusebenza kunye nokusebenza komqhubi we-thyristor kunokwethenjelwa kwaye kusebenza kakuhle.
2. Ukubethelela
Ngolawulo olungqongqo lwe-flatness kunye ne-parallelism ye-molybdenum wafer kunye nephakheji yangaphandle, i-chip kunye ne-molybdenum wafer iya kuhlanganiswa kunye nephakheji yangaphandle ngokuqinileyo kwaye ngokupheleleyo.Oku kuya kwandisa ukuchasana kwe-surge current kunye ne-high short circuit current.Kwaye umlinganiselo wobuchwephesha bomphunga we-electron waqeshwa ukwenza ifilimu eshinyeneyo ye-aluminiyam kumphezulu we-silicon wafer, kwaye umaleko we-ruthenium ofakwe kumphezulu we-molybdenum uya kwandisa ukuxhathisa ukudinwa kwe-thermal kakhulu, ixesha lobomi bomsebenzi wokutshintsha ngokukhawuleza i-thyristor iya kwandiswa kakhulu.
Iinkcukacha zobugcisa
Ipharamitha:
UHLOBO | IT(AV) A | TC ℃ | VDRM/VRRM V | II-TSM @TVJIM&10ms A | I2t A2s | VTM @IT&TJ=25℃ V / A | tq μs | Tjm ℃ | Rjc ℃/W | Rcs ℃/W | F KN | m Kg | IKHOWUDI | |
Umbane ukuya kuthi ga kwi-1600V | ||||||||||||||
YC476 | 380 | 55 | 1200~1600 | 5320 | 1.4x105 | 2.90 | 1500 | 30 | 125 | 0.054 | 0.010 | 10 | 0.08 | T2A |
YC448 | 700 | 55 | 1200~1600 | 8400 | 3.5x105 | 2.90 | 2000 | 35 | 125 | 0.039 | 0.008 | 15 | 0.26 | T5C |
Umbane ukuya kuthi ga kwi-2000V | ||||||||||||||
YC712 | 1000 | 55 | 1600-2000 | 14000 | 9.8x105 | 2.20 | 3000 | 55 | 125 | 0.022 | 0.005 | 25 | 0.46 | T8C |
YC770 | 2619 | 55 | 1600-2000 | 31400 | 4.9x106 | 1.55 | 2000 | 70 | 125 | 0.011 | 0.003 | 35 | 1.5 | T13D |