Umgangatho oPhakamileyo okhawulezayo uTshintsho Thyristor

Inkcazelo emfutshane:


Iinkcukacha zeMveliso

Iithegi zeMveliso

Ukutshintsha ngokukhawuleza i-Thyristor (uthotho oluphezulu lweYC)

Inkcazo

Umgangatho wokuvelisa i-GE kunye neteknoloji yokucubungula yaziswa kwaye yaqeshwa yi-RUNAU Electronics ukususela ngo-1980.Imeko epheleleyo yokuvelisa kunye novavanyo yayihambelana ngokupheleleyo nemfuno yentengiso yase-USA.Njengovulindlela wokuvelisa i-thyristor e-China, i-RUNAU Electronics yayibonelele ngobugcisa bezixhobo zombane zamandla karhulumente kwi-USA, amazwe aseYurophu kunye nabasebenzisi behlabathi.Ifaneleke kakhulu kwaye ihlolwe ngabathengi kwaye iphumelele enkulu kunye nexabiso lenzelwe amaqabane.

Intshayelelo:

1. Itshiphu

I-chip ye-thyristor eyenziwe yi-RUNAU Electronics i-sintered alloying iteknoloji esebenzayo.I-silicon kunye ne-molybdenum wafer yayifakwe kwi-alloying nge-aluminiyam ecocekileyo (99.999%) phantsi kwe-vacuum ephezulu kunye nokusingqongileyo okuphezulu.Ulawulo lweempawu ze-sintering yinto ephambili yokuchaphazela umgangatho we-thyristor.Ulwazi lwe-RUNAU Electronics ngaphezu kokulawula ubunzulu be-alloy junction, flatness surface, i-alloy cavity kunye nobuchule obugcweleyo bokusabalalisa, ipateni yesangqa sesangqa, isakhiwo sesango elikhethekileyo.Kwakhona ukucutshungulwa okukhethekileyo kwaqeshwa ukunciphisa ubomi bomthwali wesixhobo, ukwenzela ukuba isantya sokudibanisa umthuthi wangaphakathi sikhawuleze kakhulu, intlawulo yokubuyisela umva yesixhobo iyancitshiswa, kwaye isantya sokutshintsha siphuculwe ngenxa yoko.Imilinganiselo enjalo isetyenziselwe ukwandisa iimpawu zokutshintsha ngokukhawuleza, iimpawu ze-state-state, kunye nepropati yangoku.Ukusebenza kunye nokusebenza komqhubi we-thyristor kunokwethenjelwa kwaye kusebenza kakuhle.

2. Ukubethelela

Ngolawulo olungqongqo lwe-flatness kunye ne-parallelism ye-molybdenum wafer kunye nephakheji yangaphandle, i-chip kunye ne-molybdenum wafer iya kuhlanganiswa kunye nephakheji yangaphandle ngokuqinileyo kwaye ngokupheleleyo.Oku kuya kwandisa ukuchasana kwe-surge current kunye ne-high short circuit current.Kwaye umlinganiselo wobuchwephesha bomphunga we-electron waqeshwa ukwenza ifilimu eshinyeneyo ye-aluminiyam kumphezulu we-silicon wafer, kwaye umaleko we-ruthenium ofakwe kumphezulu we-molybdenum uya kwandisa ukuxhathisa ukudinwa kwe-thermal kakhulu, ixesha lobomi bomsebenzi wokutshintsha ngokukhawuleza i-thyristor iya kwandiswa kakhulu.

Iinkcukacha zobugcisa

  1. Ukutshintsha ngokukhawuleza i-thyristor kunye ne-alloy type chip eyenziwe yi-RUNAU Electronics ekwaziyo ukubonelela ngeemveliso ezifanelekileyo ngokupheleleyo zomgangatho we-USA.
  2. IGT, VGTkwaye namHAmaxabiso ovavanyo ku-25℃, ngaphandle kokuba kuchazwe ngenye indlela, zonke ezinye iiparamitha ngamaxabiso ovavanyo phantsi kwe-T.jm;
  3. I2t=mna2F SM×tw/2,tw= Ububanzi besiseko samaza akhoyo eSinusoidal.Nge50Hz, I2t=0.005I2I-FSM(A2S);
  4. nge60Hz:IFSM(8.3ms)=MnaFSM(10ms)×1.066,Tj=Tj;I2t(8.3ms)=Mna2T(10ms)×0.943,Tj=Tjm

Ipharamitha:

UHLOBO IT(AV)
A
TC
VDRM/VRRM
V
II-TSM
@TVJIM&10ms
A
I2t
A2s
VTM
@IT&TJ=25℃
V / A
tq
μs
Tjm
Rjc
℃/W
Rcs
℃/W
F
KN
m
Kg
IKHOWUDI
Umbane ukuya kuthi ga kwi-1600V
YC476 380 55 1200~1600 5320 1.4x105 2.90 1500 30 125 0.054 0.010 10 0.08 T2A
YC448 700 55 1200~1600 8400 3.5x105 2.90 2000 35 125 0.039 0.008 15 0.26 T5C
Umbane ukuya kuthi ga kwi-2000V
YC712 1000 55 1600-2000 14000 9.8x105 2.20 3000 55 125 0.022 0.005 25 0.46 T8C
YC770 2619 55 1600-2000 31400 4.9x106 1.55 2000 70 125 0.011 0.003 35 1.5 T13D

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