Cinezela-Pakisha IGBT
Ipakethe yokucofa i-IGBT (IEGT)
| UHLOBO | VDRM V | VRRM V | IT(AV)@80℃ A | ITGQM@CS A / µF | ITSM@10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃/W | |
| CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 |
| CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
| CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 |
| CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤0.35 | 125 | 0.03 |
| CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
| CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | ≤0.60 | 125 | 0.012 |
| CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Phawula:D- kunye no-diodiyo inxalenye, A-ngaphandle kwenxalenye yediode
Ngokwesiqhelo, iimodyuli ze-IGBT zokunxibelelana ne-solder zasetyenziswa kwisixhobo sokutshintsha senkqubo yokuhambisa ye-DC eguquguqukayo.Iphakheji yemodyuli yecala elinye lokutshatyalaliswa kobushushu.Umthamo wamandla wesixhobo ulinganiselwe kwaye awufanelekanga ukuba uqhagamshelwe kuthotho, ubomi obubi kumoya wetyuwa, ukungcangcazela okungenamandla okuchasa ukothuka okanye ukudinwa kwe-thermal.
Uhlobo olutsha lwe-cofa-contact-high-power press-pack IGBT isixhobo asisombululi ngokupheleleyo kuphela iingxaki zesithuba kwi-soldering process, ukudinwa kwe-thermal ye-soldering material kunye nokusebenza okuphantsi kokutshatyalaliswa kobushushu kwicala elinye kodwa kwakhona kuphelisa ukuxhathisa kwe-thermal phakathi kwamacandelo ahlukeneyo, nciphisa ubungakanani kunye nobunzima.Kwaye kuphuculwe kakhulu ukusebenza kakuhle kunye nokuthembeka kwesixhobo se-IGBT.Ifanelekile ukwanelisa amandla aphezulu, amandla ombane aphezulu, ukuthembeka okuphezulu kwenkqubo yokuhanjiswa kweDC eguquguqukayo.
Ukutshintshwa kohlobo loqhagamshelwano lwe-solder nge-press-pack IGBT kunyanzelekile.
Ukususela ngo-2010, i-Runau Electronics yacaciswa ukuphuhlisa uhlobo olutsha lokupakisha isixhobo se-IGBT kwaye iphumelele imveliso ngo-2013. Ukusebenza kwaqinisekiswa ngesiqinisekiso sesizwe kunye nokufezekiswa kwe-cut-edge kwagqitywa.
Ngoku siyakwazi ukuvelisa kunye nokubonelela nge-series press-pack IGBT yoluhlu lwe-IC kwi-600A ukuya kwi-3000A kunye noluhlu lwe-VCES kwi-1700V ukuya kwi-6500V.Ithemba eliqaqambileyo lepakethe ye-IGBT yokushicilela eyenziwe e-China ukuba isetyenziswe e-China bhetyebhetye inkqubo yothumelo ye-DC ilindeleke kakhulu kwaye iya kuba lelinye ilitye lemayile lehlabathi loshishino lwe-elektroniki lwaseTshayina emva kololiwe ohamba ngesantya esiphezulu sombane.
Intshayelelo emfutshane yeNdlela eqhelekileyo:
1. Indlela: Cinezela-pack IGBT CSG07E1700
●Iimpawu zombane emva kokupakishwa kunye nokucofa
● Umvaehambelanayoiqhagamshelweidiode yokubuyisela ngokukhawulezawaqukumbela
● Ipharamitha:
Ixabiso likalwe (25℃)
a.Umqokeleli we-Emitter Voltage: VGES=1700(V)
b.I-Voltage Emitter yeSango: VCES = ± 20 (V)
c.UMqokeleli wangoku: IC=800(A)ICP=1600(A)
d.Ukukhutshwa kwamandla oMqokeleli: iPC=4440(W)
e.Ubushushu boMdibaniso wokuSebenza: Tj=－20~125℃
f.Ubushushu boGcino: Tstg=－40~125℃
Qaphela: isixhobo siya konakaliswa ukuba singaphaya kwexabiso elilinganisiweyo
UmbaneCi-haracteristics, TC＝125℃，Rth (ukuxhathisa thermal ofisiphambuka ukuyaityala）ayiqukwanga
a.Ukuvuza kweSango ngoku: IGES=±5(μA)
b.Umqokeleli we-Emitter uThintela yangoku ICES=250(mA)
c.Umqokeleli we-Emitter Saturation Voltage: VCE(sat)=6(V)
d.I-Gate Emitter Threshold Voltage: VGE(th)=10(V)
e.Layita ixesha: Ton=2.5μs
f.Ixesha lokucima: I-Toff=3μs
2. Indlela: Cinezela-pack IGBT CSG10F2500
●Iimpawu zombane emva kokupakishwa kunye nokucofa
● Umvaehambelanayoiqhagamshelweidiode yokubuyisela ngokukhawulezawaqukumbela
● Ipharamitha:
Ixabiso likalwe (25℃)
a.Umqokeleli we-Emitter Voltage: VGES=2500(V)
b.I-Voltage Emitter yeSango: VCES = ± 20 (V)
c.Umqokeleli wangoku: IC=600(A)ICP=2000(A)
d.Ukukhutshwa kwamandla oMqokeleli: iPC=4800(W)
e.Ubushushu boMdibaniso wokuSebenza: Tj=－40~125℃
f.Ubushushu boGcino: Tstg=－40~125℃
Qaphela: isixhobo siya konakaliswa ukuba singaphaya kwexabiso elilinganisiweyo
UmbaneCi-haracteristics, TC＝125℃，Rth (ukuxhathisa thermal ofisiphambuka ukuyaityala）ayiqukwanga
a.Ukuvuza kweSango ngoku: IGES=±15(μA)
b.Umqokeleli we-Emitter eThintela yangoku ICES=25(mA)
c.Umqokeleli we-Emitter Saturation Voltage: VCE(sat)=3.2 (V)
d.I-Gate Emitter Threshold Voltage: VGE(th)=6.3(V)
e.Layita ixesha: Ton=3.2μs
f.Ixesha lokucima: I-Toff=9.8μs
g.Umbane weDiode Phambili: VF=3.2 V
h.Ixesha lokuBuyisa uBuyiselo lweDiode: Trr=1.0 μs
3. Indlela: Cinezela-pack IGBT CSG10F4500
●Iimpawu zombane emva kokupakishwa kunye nokucofa
● Umvaehambelanayoiqhagamshelweidiode yokubuyisela ngokukhawulezawaqukumbela
● Ipharamitha:
Ixabiso likalwe (25℃)
a.Umqokeleli we-Emitter Voltage: VGES=4500(V)
b.I-Voltage Emitter yeSango: VCES = ± 20 (V)
c.Umqokeleli wangoku: IC=600(A)ICP=2000(A)
d.Ukukhutshwa kwamandla oMqokeleli: PC=7700(W)
e.Ubushushu boMdibaniso wokuSebenza: Tj=－40~125℃
f.Ubushushu boGcino: Tstg=－40~125℃
Qaphela: isixhobo siya konakaliswa ukuba singaphaya kwexabiso elilinganisiweyo
UmbaneCi-haracteristics, TC＝125℃，Rth (ukuxhathisa thermal ofisiphambuka ukuyaityala）ayiqukwanga
a.Ukuvuza kweSango ngoku: IGES=±15(μA)
b.Umqokeleli we-Emitter eThintela yangoku ICES=50(mA)
c.Umqokeleli we-Emitter Saturation Voltage: VCE(sat)=3.9 (V)
d.I-Gate Emitter Threshold Voltage: VGE(th)=5.2 (V)
e.Layita ixesha: Ton=5.5μs
f.Ixesha lokucima: I-Toff=5.5μs
g.Umbane weDiode Phambili: VF=3.8 V
h.Ixesha lokuBuyisa uBuyiselo lweDiode: Trr=2.0 μs
Phawula:I-IGBT ye-Press-pack iluncedo kwixesha elide lokuthembeka okuphezulu koomatshini, ukuchasana okuphezulu kumonakalo kunye neempawu zesakhiwo sokudibanisa i-press, ilungele ukuqeshwa kwisixhobo sochungechunge, kwaye xa kuthelekiswa ne-GTO thyristor yendabuko, i-IGBT yindlela yombane. .Ngoko ke, kulula ukusebenza, ukhuseleko kunye noluhlu olubanzi lokusebenza.