UMGANGATHO WOKUVELISWA KWE-ZW SERIES WEDDING DIODE
Iimbekiselo zesiqhelo ezisetyenziswe nguJiangsu Yangjie Runau Semiconductor Co kwimveliso ye-welding diode bezi zilandelayo:
1. GB/T 4023—1997 Discrete Devices of Semiconductor Devices and Integrated Circuits Part 2: Rectifier Diodes
2. GB/T 4937—1995 Iindlela zoVavanyo lweMechanical kunye neMozulu yeZixhobo zeSemiconductor
3. JB/T 2423—1999 Power Semiconductor Devices – Indlela yokuModeli
4. JB/T 4277—1996 Power Semiconductor Device Packaging
5. I-JB / T 7624-1994 iRectifier Diode Test Method
Imodeli kunye nobukhulu
1. Igama lomzekelo: Imodeli ye-welding diode ibhekisela kwimimiselo ye-JB / T 2423-1999, kwaye intsingiselo yenxalenye nganye yomzekelo iboniswe kuMfanekiso 1 apha ngezantsi:
2. Iisimboli zegraphical kunye nokuchongwa kwetheminali (sub).
Iimpawu zegraphic kunye nokuchongwa kwe-terminal kuboniswe kuMfanekiso 2, utolo lukhomba kwi-terminal ye-cathode.
3. Ubume kunye nemilinganiselo yokufakela
Ubume be-diode edibeneyo yi-convex kunye nodidi lwe-disc, kwaye imilo enobungakanani kufuneka ihlangabezane neemfuno zoMzobo 3 kunye neThebhile 1.
| Into | Ubungakanani (mm) | ||
| ZW7100 | ZW12000 | ZW16000/ZW18000 | |
| Icathode flange (Dmax) | 61 | 76 | 102 |
| Cathode kunye anode Mesa(D1) | 44±0.2 | 57±0.2 | 68±0.2 |
| Ubukhulu be-ceramic ring(D2ubuninzi) | 55.5 | 71.5 | 90 |
| Ubunzima bubonke (A) | 8±1 | 8±1 | 13±2 |
| Mount indawo umngxuma | Ububanzi bomngxuma: φ3.5±0.2mm, Ubunzulu bomngxuma: 1.5±0.3mm | ||
| Qaphela: ubungakanani obuneenkcukacha kunye nobukhulu nceda uqhagamshelane | |||
Amanqaku kunye neempawu
1. Inqanaba leParameter
Uthotho lwamandla ombane aphindaphindwayo aphinda-phindayo (VRRM) njengoko kuchaziwe kwiThebhile yesi-2
Itheyibhile ye-2 iNqanaba le-Voltage
| VRRM(V) | 200 | 400 |
| Inqanaba | 02 | 04 |
2. Ukunciphisa amaxabiso
Amaxabiso amiselweyo aya kuhambelana neThebhile 3 kwaye asebenze kulo lonke udidi lobushushu bokusebenza.
Itheyibhile 3 Ixabiso eliqingqiweyo
| Ixabiso lomda | Uphawu | Iyunithi | Ixabiso | |||
| ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
| Ubushushu bemeko | Tcase | ℃ | -40 -85 | |||
| Ubushushu obulinganayo besiphambuka (ubukhulu) | T(vj) | ℃ | 170 | |||
| Ubushushu bokugcina | Tstg | ℃ | -40-170 | |||
| Incopho yombane ephinda-phindayo (ubukhulu) | VRRM | V | 200/400 | 200/400 | 200/400 | 200/400 |
| Ukubuyisela umva amandla ombane angaphindi aphindaphindwe (max | VI-RSM | V | 300/450 | 300/450 | 300/450 | 300/450 |
| Umndilili wokuqhubela phambili ngoku (ubuninzi) | IF (AV) | A | 7100 | 12000 | 16000 | 18000 |
| Phambili (akuphindaphindwayo) ukushukuma kwangoku (ubuninzi) | IFSM | A | 55000 | 85000 | 120000 | 135000 |
| I²t (ubukhulu) | I²t | kA²s | 15100 | 36100 | 72000 | 91000 |
| Amandla okunyusa | F | kN | 22-24 | 30 ~ 35 | 45 ~ 50 | 52-57 |
3. Iimpawu zokuziphatha
Itheyibhile 4 Amaxabiso aphezulu eempawu
| Umlinganiswa kunye nemeko | Uphawu | Iyunithi | Ixabiso | |||
| ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
| Phambili amandla ombane aphezuluIFM=5000A, Tj=25℃ | VFM | V | 1.1 | 1.08 | 1.06 | 1.05 |
| Reverse incopho ephinda-phindayo yangokuTj=25℃, Tj=170℃ | IRRM | mA | 50 | 60 | 60 | 80 |
| Ukumelana ne-Thermal Junction-to-case | Rjc | ℃/W | 0.01 | 0.006 | 0.004 | 0.004 |
| Qaphela: kwiimfuno ezizodwa nceda uqhagamshelane | ||||||
Iwelding diodeeveliswe nguJiangsu Yangjie Runau Semiconductor isetyenziswa ngokubanzi kwi-welding welder, medium and high frequency welding machine up to 2000Hz okanye ngaphezulu.Ngombane ohamba phambili osezantsi kakhulu, ukumelana nobushushu obuphantsi kakhulu, ubuchwephesha bokwenza ubugcisa, ubuchule obugqwesileyo bokutshintsha kunye nokusebenza okuzinzileyo kubasebenzisi behlabathi, i-welding diode evela eJiangsu Yangjie Runau Semiconductor sesona sixhobo sithembekileyo samandla aseTshayina. iimveliso ze-semiconductor.