China Standard Diode kunye High Junction lobushushu umzi-mveliso kunye nababoneleli |Runau Electronics

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I-Diode esemgangathweni enoMfanekiso oBonisiweyo oPhezulu weJunction

IDiode esemgangathweni enobushushu obuphezulu beJunction

Inkcazelo emfutshane:

Iimbonakalo:

• Ilungiselelwe ifreyithingi yesekethe

• Ilahleko ephantsi kurhulumente

• Ikhono eliphezulu lokuphatha langoku

Usetyenziso:

• Yenzelwe iimfuno eziphezulu zomgangatho kunye nokusebenza

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Iinkcukacha zeMveliso

Iithegi zeMveliso

IDiode esemgangathweni enobushushu obuphezulu beJunction

Ipharamitha:

UHLOBO	I_F(AV) A	T_C ℃	V_DRM/V_RRM V	I_FSM@T_VJIM&10ms A	I²t A²s	V_FM @IF&TJ V / A / ℃			T_jm ℃	R_jc ℃/W	R_cs ℃/W	F KN	m Kg	IKHOWUDI
Umbane ukuya kuthi ga kwi-2200V
YA640	1500	95	1200~2200	15000	1.12×106	1.090	1000	160	185	0.039	0.008	15	0.26	D5C
YA740	2400	100	1400~2000	30000	4.5×106	0.860	1000	160	185	0.022	0.005	25	0.46	D8C
Umbane ukuya kuthi ga kwi-2600V
YA540	1000	100	2000~2400	11500	6.6×105	1.080	1000	160	185	0.045	0.010	13	0.2	D3C
YA641	1500	90	1800~2600	15000	1.12×106	0.990	1000	160	185	0.039	0.008	15	0.26	D5C
YA800	4400	90	1800~2600	55000	1.5×107	0.865	2000	160	185	0.010	0.003	35	1.1	D13C
Umbane ukuya kuthi ga kwi-3200V
YA750	1800	100	2500~3200	22000	2.4×106	0.960	1000	160	175	0.022	0.005	25	0.46	D8C
YA801	3900	90	2800~3200	57000	1.6×107	1.050	2000	150	175	0.010	0.003	35	1.1	D13C
Umbane ukuya kuthi ga kwi-4600V
YA643	1000	85	3500~4400	10000	5×105	1.400	1000	160	170	0.039	0.008	15	0.26	D5C
YA780	1500	100	3500~4600	18000	1.6×106	1.150	1000	160	170	0.022	0.005	25	0.46	D8C
YA880	2900	100	3800~4500	36000	6.5×106	1.150	2000	160	170	0.010	0.003	35	1.1	D13C

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