Thyristor Chip
Thyristor Chip
I-chip ye-thyristor eyenziwe yi-RUNAU Electronics yaqaliswa ngumgangatho wokusetyenzwa kwe-GE kunye nobuchwepheshe obuhambelana nomgangatho wesicelo sase-USA kwaye ufanelekile ngabathengi behlabathi jikelele.Ibonakaliswe kwiimpawu eziqinileyo zokumelana nokudinwa kwe-thermal, ubomi benkonzo ende, amandla ombane aphezulu, umsinga omkhulu, ukuguquguquka okunamandla kokusingqongileyo, njl. Ngo-2010, i-RUNAU Electronics yavelisa ipateni entsha ye-thyristor chip edibanisa inzuzo yemveli ye-GE kunye nobuchwepheshe baseYurophu, ukusebenza kunye ukusebenza kakuhle kwalungiswa kakhulu.
Ipharamitha:
| Ububanzi mm | Ukutyeba mm | I-Voltage V | Isango Dia. mm | Cathode Inner Dia. mm | Cathode Out Dia. mm | Tjm ℃ |
| 25.4 | 1.5±0.1 | ≤2000 | 2.5 | 5.6 | 20.3 | 125 |
| 25.4 | 1.6-1.8 | 2200-3500 | 2.6 | 5.6 | 15.9 | 125 |
| 29.72 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 24.5 | 125 |
| 32 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 26.1 | 125 |
| 35 | 2±0.1 | ≤2000 | 3.8 | 7.6 | 29.1 | 125 |
| 35 | 2.1-2.4 | 2200-4200 | 3.8 | 7.6 | 24.9 | 125 |
| 38.1 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 32.8 | 125 |
| 40 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 33.9 | 125 |
| 40 | 2.1-2.4 | 2200-4200 | 3.5 | 8.1 | 30.7 | 125 |
| 45 | 2.3±0.1 | ≤2000 | 3.6 | 8.8 | 37.9 | 125 |
| 50.8 | 2.5±0.1 | ≤2000 | 3.6 | 8.8 | 43.3 | 125 |
| 50.8 | 2.6-2.9 | 2200-4200 | 3.8 | 8.6 | 41.5 | 125 |
| 50.8 | 2.6-2.8 | 2600-3500 | 3.3 | 7 | 41.5 | 125 |
| 55 | 2.5±0.1 | ≤2000 | 3.3 | 8.8 | 47.3 | 125 |
| 55 | 2.5-2.9 | ≤4200 | 3.8 | 8.6 | 45.7 | 125 |
| 60 | 2.6-3.0 | ≤4200 | 3.8 | 8.6 | 49.8 | 125 |
| 63.5 | 2.7-3.1 | ≤4200 | 3.8 | 8.6 | 53.4 | 125 |
| 70 | 3.0-3.4 | ≤4200 | 5.2 | 10.1 | 59.9 | 125 |
| 76 | 3.5-4.1 | ≤4800 | 5.2 | 10.1 | 65.1 | 125 |
| 89 | 4-4.4 | ≤4200 | 5.2 | 10.1 | 77.7 | 125 |
| 99 | 4.5-4.8 | ≤3500 | 5.2 | 10.1 | 87.7 | 125 |
Iinkcukacha zobugcisa:
I-RUNAU Electronics inika amandla e-semiconductor chips of thyristor phase elawulwayo kunye nokutshintsha ngokukhawuleza i-thyristor.
1. Ukuhla kwamandla ombane aphantsi
2. Ubukhulu bomaleko we-aluminium bungaphezulu kwe-microns ezili-10
3. Imesa yokukhusela umaleko kabini
Iingcebiso:
1. Ukuze uhlale usebenza ngcono, i-chip iya kugcinwa kwi-nitrogen okanye kwimeko ye-vacuum ukuthintela utshintsho lombane olubangelwa yi-oxidation kunye nokufuma kweengceba ze-molybdenum.
2. Ngalo lonke ixesha gcina umphezulu we-chip ucocekile, nceda unxibe iiglavu kwaye ungachukumisi itshiphu ngezandla ezingenanto.
3. Sebenza ngononophelo kwinkqubo yokusetyenziswa.Musa ukonakalisa umphezulu we-resin edge ye-chip kunye ne-aluminium umaleko kwindawo yepali yesango kunye ne-cathode.
4. Kuvavanyo okanye kwi-encapsulation, nceda uqaphele ukuba i-parallelism, i-flatness kunye ne-clamp force i-fixture kufuneka ihambelane nemigangatho echaziweyo.I-parallelism engalunganga iya kubangela uxinzelelo olungalinganiyo kunye nomonakalo we-chip ngamandla.Ukuba unyanzeliso lwe-clamp lunyanzelisiwe, i-chip iya konakaliswa ngokulula.Ukuba i-clamp force emiselweyo incinci kakhulu, uqhagamshelwano olubi kunye nokutshatyalaliswa kobushushu kuya kuchaphazela isicelo.
5. Ibhloko yoxinzelelo edibanisa ne-cathode surface ye-chip kufuneka ihlanjululwe
Cebisa iClamp Force
| Ubungakanani beeChips | Isindululo sokunyanzeliswa kweClamp |
| (KN）±10% | |
| Φ25.4 | 4 |
| Φ30 okanye Φ30.48 | 10 |
| Φ35 | 13 |
| Φ38 okanye Φ40 | 15 |
| Φ50.8 | 24 |
| Φ55 | 26 |
| Φ60 | 28 |
| Φ63.5 | 30 |
| Φ70 | 32 |
| Φ76 | 35 |
| Φ85 | 45 |
| Φ99 | 65 |