Thyristor Chip

Inkcazelo emfutshane:

Iinkcukacha zeMveliso:

Umgangatho:

•Itshiphu nganye ivavanywa e-TJM , ukuhlolwa ngokungaqhelekanga kunqatshelwe ngokungqongqo.

• Ukuhambelana okugqwesileyo kweeparamitha zeetships

 

Iimbonakalo:

• Ukuhla kwamandla ombane aphantsi

•Ukumelana nokudinwa ngamandla kwe-thermal

•Ubukhulu becathode aluminiyam umaleko bungaphezulu kwe-10µm

• Ukhuseleko lweeleya eziphindwe kabini kwi-mesa


Iinkcukacha zeMveliso

Iithegi zeMveliso

tshintsha ngokukhawuleza itshiphu ye-thyristor 3

Thyristor Chip

I-chip ye-thyristor eyenziwe yi-RUNAU Electronics yaqaliswa ngumgangatho wokusetyenzwa kwe-GE kunye nobuchwepheshe obuhambelana nomgangatho wesicelo sase-USA kwaye ufanelekile ngabathengi behlabathi jikelele.Ibonakaliswe kwiimpawu eziqinileyo zokumelana nokudinwa kwe-thermal, ubomi benkonzo ende, amandla ombane aphezulu, umsinga omkhulu, ukuguquguquka okunamandla kokusingqongileyo, njl. Ngo-2010, i-RUNAU Electronics yavelisa ipateni entsha ye-thyristor chip edibanisa inzuzo yemveli ye-GE kunye nobuchwepheshe baseYurophu, ukusebenza kunye ukusebenza kakuhle kwalungiswa kakhulu.

Ipharamitha:

Ububanzi
mm
Ukutyeba
mm
I-Voltage
V
Isango Dia.
mm
Cathode Inner Dia.
mm
Cathode Out Dia.
mm
Tjm
25.4 1.5±0.1 ≤2000 2.5 5.6 20.3 125
25.4 1.6-1.8 2200-3500 2.6 5.6 15.9 125
29.72 2±0.1 ≤2000 3.3 7.7 24.5 125
32 2±0.1 ≤2000 3.3 7.7 26.1 125
35 2±0.1 ≤2000 3.8 7.6 29.1 125
35 2.1-2.4 2200-4200 3.8 7.6 24.9 125
38.1 2±0.1 ≤2000 3.3 7.7 32.8 125
40 2±0.1 ≤2000 3.3 7.7 33.9 125
40 2.1-2.4 2200-4200 3.5 8.1 30.7 125
45 2.3±0.1 ≤2000 3.6 8.8 37.9 125
50.8 2.5±0.1 ≤2000 3.6 8.8 43.3 125
50.8 2.6-2.9 2200-4200 3.8 8.6 41.5 125
50.8 2.6-2.8 2600-3500 3.3 7 41.5 125
55 2.5±0.1 ≤2000 3.3 8.8 47.3 125
55 2.5-2.9 ≤4200 3.8 8.6 45.7 125
60 2.6-3.0 ≤4200 3.8 8.6 49.8 125
63.5 2.7-3.1 ≤4200 3.8 8.6 53.4 125
70 3.0-3.4 ≤4200 5.2 10.1 59.9 125
76 3.5-4.1 ≤4800 5.2 10.1 65.1 125
89 4-4.4 ≤4200 5.2 10.1 77.7 125
99 4.5-4.8 ≤3500 5.2 10.1 87.7 125

 

Iinkcukacha zobugcisa:

I-RUNAU Electronics inika amandla e-semiconductor chips of thyristor phase elawulwayo kunye nokutshintsha ngokukhawuleza i-thyristor.

1. Ukuhla kwamandla ombane aphantsi

2. Ubukhulu bomaleko we-aluminium bungaphezulu kwe-microns ezili-10

3. Imesa yokukhusela umaleko kabini

 

Iingcebiso:

1. Ukuze uhlale usebenza ngcono, i-chip iya kugcinwa kwi-nitrogen okanye kwimeko ye-vacuum ukuthintela utshintsho lombane olubangelwa yi-oxidation kunye nokufuma kweengceba ze-molybdenum.

2. Ngalo lonke ixesha gcina umphezulu we-chip ucocekile, nceda unxibe iiglavu kwaye ungachukumisi itshiphu ngezandla ezingenanto.

3. Sebenza ngononophelo kwinkqubo yokusetyenziswa.Musa ukonakalisa umphezulu we-resin edge ye-chip kunye ne-aluminium umaleko kwindawo yepali yesango kunye ne-cathode.

4. Kuvavanyo okanye kwi-encapsulation, nceda uqaphele ukuba i-parallelism, i-flatness kunye ne-clamp force i-fixture kufuneka ihambelane nemigangatho echaziweyo.I-parallelism engalunganga iya kubangela uxinzelelo olungalinganiyo kunye nomonakalo we-chip ngamandla.Ukuba unyanzeliso lwe-clamp lunyanzelisiwe, i-chip iya konakaliswa ngokulula.Ukuba i-clamp force emiselweyo incinci kakhulu, uqhagamshelwano olubi kunye nokutshatyalaliswa kobushushu kuya kuchaphazela isicelo.

5. Ibhloko yoxinzelelo edibanisa ne-cathode surface ye-chip kufuneka ihlanjululwe

 Cebisa iClamp Force

Ubungakanani beeChips Isindululo sokunyanzeliswa kweClamp
(KN)±10%
Φ25.4 4
Φ30 okanye Φ30.48 10
Φ35 13
Φ38 okanye Φ40 15
Φ50.8 24
Φ55 26
Φ60 28
Φ63.5 30
Φ70 32
Φ76 35
Φ85 45
Φ99 65

  • Ngaphambili:
  • Okulandelayo:

  • Bhala umyalezo wakho apha kwaye uwuthumele kuthi