I-Chip ye-diode yokulungisa
Isilungisi seDiode Chip
I-chip ye-diode ehlaziyiweyo eyenziwe yi-RUNAU Electronics yaziswa kuqala ngomgangatho wokusetyenzwa kwe-GE kunye nobuchwepheshe obuthobela umgangatho wesicelo wase-USA kwaye ufanelekile ngabaxumi behlabathi.Ibonakaliswe kwiimpawu ezinamandla zokumelana nokudinwa kwe-thermal, ubomi benkonzo ende, i-voltage ephezulu, yangoku enkulu, ukulungelelaniswa okusingqongileyo okunamandla, njl njl. Yonke i-chip ivavanywa kwi-TJM, ukuhlolwa okungahleliwe akuvumelekanga ngokungqongqo.Ukhetho oluhambelanayo lweeparamitha zeetships luyafumaneka ukuba lubonelelwe ngokwemfuno yesicelo.
Ipharamitha:
| Ububanzi mm | Ukutyeba mm | I-Voltage V | Cathode Out Dia. mm | Tjm ℃ |
| 17 | 1.5±0.1 | ≤2600 | 12.5 | 150 |
| 23.3 | 1.95±0.1 | ≤2600 | 18.5 | 150 |
| 23.3 | 2.15±0.1 | 4200-5500 | 16.5 | 150 |
| 24 | 1.5±0.1 | ≤2600 | 18.5 | 150 |
| 25.4 | 1.4-1.7 | ≤3500 | 19.5 | 150 |
| 29.72 | 1.95±0.1 | ≤2600 | 25 | 150 |
| 29.72 | 1.9-2.3 | 2800-5500 | 23 | 150 |
| 32 | 1.9±0.1 | ≤2200 | 27.5 | 150 |
| 32 | 2±0.1 | 2400-2600 | 26.3 | 150 |
| 35 | 1.8-2.1 | ≤3500 | 29 | 150 |
| 35 | 2.2±0.1 | 3600-5000 | 27.5 | 150 |
| 36 | 2.1±0.1 | ≤2200 | 31 | 150 |
| 38.1 | 1.9±0.1 | ≤2200 | 34 | 150 |
| 40 | 1.9-2.2 | ≤3500 | 33.5 | 150 |
| 40 | 2.2-2.5 | 3600-6500 | 31.5 | 150 |
| 45 | 2.3±0.1 | ≤3000 | 39.5 | 150 |
| 45 | 2.5±0.1 | 3600-4500 | 37.5 | 150 |
| 50.8 | 2.4-2.7 | ≤4000 | 43.5 | 150 |
| 50.8 | 2.8±0.1 | 4200-5000 | 41.5 | 150 |
| 55 | 2.4-2.8 | ≤4500 | 47.7 | 150 |
| 55 | 2.8-3.1 | 5200-6500 | 44.5 | 150 |
| 63.5 | 2.6-3.0 | ≤4500 | 56.5 | 150 |
| 63.5 | 3.0-3.3 | 5200-6500 | 54.5 | 150 |
| 70 | 2.9-3.1 | ≤3200 | 63.5 | 150 |
| 70 | 3.2±0.1 | 3400-4500 | 62 | 150 |
| 76 | 3.4-3.8 | ≤4500 | 68.1 | 150 |
| 89 | 3.9-4.3 | ≤4500 | 80 | 150 |
| 99 | 4.4-4.8 | ≤4500 | 89.7 | 150 |
Iinkcukacha zobugcisa:
I-RUNAU Electronics ibonelela ngeetshiphusi ze-semiconductor zamandla e-diode yokulungisa kunye ne-welding diode.
1. Ukuhla kwamandla ombane aphantsi
2. I-metallization yegolide iya kusetyenziswa ekuphuculeni ipropathi yokuqhuba kunye nokushisa ubushushu.
3. Imesa yokukhusela umaleko kabini
Iingcebiso:
1. Ukuze uhlale usebenza ngcono, i-chip iya kugcinwa kwi-nitrogen okanye kwimeko ye-vacuum ukuthintela utshintsho lombane olubangelwa yi-oxidation kunye nokufuma kweengceba ze-molybdenum.
2. Ngalo lonke ixesha gcina umphezulu we-chip ucocekile, nceda unxibe iiglavu kwaye ungachukumisi itshiphu ngezandla ezingenanto.
3. Sebenza ngononophelo kwinkqubo yokusetyenziswa.Musa ukonakalisa umphezulu we-resin edge ye-chip kunye ne-aluminium umaleko kwindawo yepali yesango kunye ne-cathode.
4. Kuvavanyo okanye kwi-encapsulation, nceda uqaphele ukuba i-parallelism, i-flatness kunye ne-clamp force i-fixture kufuneka ihambelane nemigangatho echaziweyo.I-parallelism engalunganga iya kubangela uxinzelelo olungalinganiyo kunye nomonakalo we-chip ngamandla.Ukuba unyanzeliso lwe-clamp lunyanzelisiwe, i-chip iya konakaliswa ngokulula.Ukuba i-clamp force emiselweyo incinci kakhulu, uqhagamshelwano olubi kunye nokutshatyalaliswa kobushushu kuya kuchaphazela isicelo.
5. Ibhloko yoxinzelelo edibanisa ne-cathode surface ye-chip kufuneka ihlanjululwe
Cebisa iClamp Force
| Ubungakanani beeChips | Isindululo sokunyanzeliswa kweClamp |
| (KN）±10% | |
| Φ25.4 | 4 |
| Φ30 okanye Φ30.48 | 10 |
| Φ35 | 13 |
| Φ38 okanye Φ40 | 15 |
| Φ50.8 | 24 |
| Φ55 | 26 |
| Φ60 | 28 |
| Φ63.5 | 30 |
| Φ70 | 32 |
| Φ76 | 35 |
| Φ85 | 45 |
| Φ99 | 65 |